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| EMF21 / UMF21N Transistors Power management (dual transistors) EMF21 / UMF21N 2SA2018 and DTC114E are housed independently in a EMT6 or UMT6 package. Application Power management circuit External dimensions (Units : mm) EMF21 0.22 (4) (5) (6) (3) (2) Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. ROHM : EMT6 1.2 1.6 (1) 0.13 Each lead has same dimensions Abbreviated symbol : F21 Structure Silicon epitaxial planar transistor UMF21N (4) 0.65 1.3 0.65 0.7 0.9 (3) 0.5 0.5 0.5 1.0 1.6 0.2 1.25 (3) (2) (1) 2.1 0.15 DTr2 R2 (4) R1 Tr1 0.1Min. 0 to 0.1 (5) R1=10k R2=10k (6) ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol :F21 Package, marking, and packaging specifications Type Package Marking Code Basic ordering unit(pieces) EMF21 EMT6 F21 T2R 8000 UMF21N UMT6 F21 TR 3000 (1) Equivalent circuits (6) Each lead has same dimensions 2.0 (5) (2) 1/4 EMF21 / UMF21N Transistors Absolute maximum ratings (Ta=25C) Tr1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits VCBO -15 VCEO -12 VEBO -6 IC -500 Collector current ICP -1.0 PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg -55~+150 Range of storage temperature 1 Single pulse PW=1ms 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Unit V V V mA A mW C C 1 2 DTr2 Parameter Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Limits Symbol 50 VCC -10~+40 VIN 100 IC 50 IO 150(TOTAL) PC Tj 150 Tstg -55~+150 Unit V V mA mA mW C C 1 2 1 Characteristics of built-in transistor. 2 Each terminal mounted on a recommended land. Electrical characteristics (Ta=25C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -12 -15 -6 - - - 270 - - Typ. - - - - - -100 - 260 6.5 Max. - - - -100 -100 -250 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=-1mA IC=-10A IE=-10A VCB=-15V VEB=-6V IC=-200mA, IB=-10mA VCE=-2V, IC=-10mA VCE=-2V, IE=10mA, f=100MHz VCB=-10V, IE=0mA, f=1MHz DTr2 Parameter Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min. - 3 - - - 30 7 0.8 - Typ. - - 0.1 - - - 10 1 250 Max. 0.5 - 0.3 0.88 0.5 - 13 1.2 - V V mA A - k - MHz Unit Conditions VCC=5V, IO=100A VO=0.3V, IO=10mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA - - VCE=10V, IE=-5mA, f=100MHz Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency Transition frequency of the device 2/4 EMF21 / UMF21N Transistors Electrical characteristic curves Tr1 1000 COLLECTOR CURRENT : IC (mA) VCE=2V Pulsed DC CURRENT GAIN : hFE 1000 Ta=125C Ta=25C Ta=-40C COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 1000 Ta=25C Pulsed VCE=2V Pulsed 100 100 100 IC/IB=50 IC/IB=20 5C Ta=25 C Ta= -40 Ta=12 C 10 10 10 IC/IB=10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 1 10 100 1000 1 1 10 100 1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 DC current gain vs. Fig.3 Collector-emitter saturation voltage collector current vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) BASER SATURATION VOLTAGE : VBE (sat) (mV) 1000 IC/IB=20 Pulsed 10000 100 Ta=25C Ta=125C 1000 Ta=25C Ta=-40C TRANSITION FREQUENCY : fT (MHz) IC/IB=20 Pulsed 1000 VCE=2V Ta=25C Pulsed 100 Ta=125C Ta=-40C 10 100 10 1 1 10 100 1000 10 1 10 100 1000 1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ) Fig.5 Base-emitter saturation voltage Fig.6 Gain bandwidth product vs. collector current vs. emitter current EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 IE=0A f=1MHz Ta=25C 100 Cib 10 Cob 1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/4 EMF21 / UMF21N Transistors DTr2 100 50 OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) VO=0.3V 10m 5m 2m 1m 500 200 100 50 20 10 5 2 1 0 Ta=100C 25C -40C VCC=5V 1k 500 DC CURRENT GAIN : GI VO=5V Ta=100C 25C -40C 20 10 5 2 1 500m 200m 100m 100 200 500 1m 2m 5m 10m 20m 50m 100m Ta=-40C 25C 100C 200 100 50 20 10 5 2 0.5 1.0 1.5 2.0 2.5 3.0 1 100 200 5001m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) Fig.3 DC current gain vs. output current 1 500m OUTPUT VOLTAGE : VO(on) (V) lO/lI=20 Ta=100C 25C -40C 200m 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 4/4 This datasheet has been download from: www..com Datasheets for electronics components. |
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